We produce gallium arsenide polycrystals and monocrystals, 6N and 7N polycrystal materials as well as 2-inch, 3-inch, 4-inch and 6-inch gallium arsenide crystals usingthe VGF method. In terms of doping, the products can be either silicon-doped or zinc-doped semiconducting crystals or undoped semi-insulating RF crystals.